may 2011 ?2011 fairchild semiconductor corporation FDT86244 rev.c www.fairchildsemi.com 1 FDT86244 n-channel powertrench ? mosfet FDT86244 n-channel power trench ? mosfet 150 v, 2.8 a, 128 m features ? max r ds(on) = 128 m at v gs = 10 v, i d = 2.8 a ? max r ds(on) = 178 m at v gs = 6 v, i d = 2.4 a ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? fast switching speed ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been optimized for r ds(on) , switching performance and ruggedness. applications ? load switch ? primary switch g d s d sot-22 3 s g d d mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 150 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 2.8 a -pulsed 12 e as single pulse avalanche energy (note 3) 12 mj p d power dissipation t a = 25 c (note 1a) 2.2 w power dissipation t a = 25 c (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 12 c/w r ja thermal resistance, junction to ambient (note 1a) 55 device marking device package reel size tape width quantity 86244 FDT86244 sot-223 13 ?? 12 mm 2500 units
www.fairchildsemi.com 2 ?2011 fairchild semiconductor corporation FDT86244 rev.c FDT86244 n-channel powertrench ? mosfet electrical ch aracteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 150 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 104 mv/c i dss zero gate voltage drain current v ds = 120 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 3.1 4.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -10 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.8 a 106 128 m v gs = 6 v, i d = 2.4 a 127 178 v gs = 10 v, i d = 2.8 a, t j = 125 c 196 237 g fs forward transconductance v ds = 10 v, i d = 2.8 a 12 s c iss input capacitance v ds = 75 v, v gs = 0 v, f = 1 mhz 295 395 pf c oss output capacitance 33 45 pf c rss reverse transfer capacitance 2.4 5 pf r g gate resistance 1.0 t d(on) turn-on delay time v dd = 75 v, i d = 2.8 a, v gs = 10 v, r gen = 6 5.3 11 ns t r rise time 1.3 10 ns t d(off) turn-off delay time 9.8 20 ns t f fall time 2.4 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 75 v, i d = 2.8 a 4.9 7 nc q g(tot) total gate charge v gs = 0 v to 5 v 2.8 4 nc q gs total gate charge 1.4 nc q gd gate to drain ?miller? charge 1.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.8 a (note 2) 0.82 1.3 v t rr reverse recovery time i f = 2.8 a, di/dt = 100 a/ s 48 77 ns q rr reverse recovery charge 44 70 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c; n-ch: l = 1 mh, i as = 5 a, v dd = 135 v, v gs = 10 v. 55 c/w when mounted on a 1 in 2 pad of 2 oz copper a) 118 c/w when mounted on a minimum pad of 2 oz copper b)
www.fairchildsemi.com 3 ?2011 fairchild semiconductor corporation FDT86244 rev.c FDT86244 n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 3 6 9 12 v gs = 10 v v ds , drain to source voltage (v) i d , drain current (a) v gs = 5 v v gs = 6 v v gs = 5.5 v pulse duration = 80 p s duty cycle = 0.5% max on region characteristics figure 2. 03691 2 0 1 2 3 4 v gs = 10 v v gs = 5.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d = 2.8 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 100 200 300 400 500 t j = 125 o c i d = 2.8 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 234567 0 3 6 9 12 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2011 fairchild semiconductor corporation FDT86244 rev.c FDT86244 n-channel powertrench ? mosfet figure 7. 012345 0 2 4 6 8 10 i d = 2.8 a v dd = 100 v v dd = 50 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 1 2 4 6 8 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 1 2 3 4 5 6 v gs = 6 v r t jc = 12 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.1 1 10 100 500 0.005 0.01 0.1 1 10 20 100 us 1 ms 1 s 10 ms dc 10 s 100 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 118 o c/w t a = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 1 10 100 500 single pulse r t ja = 118 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 ?2011 fairchild semiconductor corporation FDT86244 rev.c FDT86244 n-channel powertrench ? mosfet figure 13. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 118 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
FDT86244 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FDT86244 rev.c anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. ? 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